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MMBTSC3876
NPN Silicon Epitaxial Planar Transistor
for general purpose application The transistor is subdivided into three groups O, Y and G according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 35 30 5 500 50 200 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 1 V, IC = 100 mA O Y G O Y, G Symbol hFE hFE hFE hFE hFE ICBO IEBO VCE(sat) VBE fT Ccb Min. 70 120 200 25 40 Typ. 300 7 Max. 140 240 400 0.1 0.1 0.25 1 Unit A A V V MHz pF
at VCE = 6 V, IC = 400 mA Collector Cutoff Current at VCB = 35 V Emitter Cutoff Current at VEB = 5 V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Transition Frequency at VCE = 6 V, IC = 20 mA Collector Base Capacitance at VCB = 6 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 27/04/2007
MMBTSC3876
Power Dissipation vs Ambient Temperature
300
Power Dissipation: Ptot (mW)
250
200
150
100
50 0 0 25 50 75 100
O
125
150
Ambient Temperature: Ta ( C)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 27/04/2007

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